Interfacially initiated crystallization in amorphous germanium films

Crystallization and melting in metal-semiconductor multilayers.

The amorphous-to-microcrystalline phase transition of Ge in Pb/Ge multilayer geometry has been investigated as a function of layer thicknesses with the use of high-temperature x-raydiA'raction techniques. During crystallization, the modulation structure is destroyed and the Pb texture improves. In addition, the crystallization temperature decreases with decreasing amorphous Ge thickness and inc...

Synthesis and size-dependent crystallization of colloidal germanium telluride nanoparticles†‡

Colloidal nanocrystals have long been used to study the dependence of phase stability and transitions on size. Both structural phase stability and phase transitions change dramatically in the nanometre size regime where the surface plays a significant role in determining the overall energetics of the system. We investigate the solid–solid phase transformation of crystallization in amorphous GeT...

Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses

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Aluminum-induced Crystallization of Semiconductor Thin Films

Thin film materials of the semiconductors, such as silicon (Si), germanium (Ge) or their alloys, are turning into the most promising functional materials in the energy technology. However, the morphologies of these semiconductor thin films must be varied to be suitable for the different applications, e.g. a large-grained layer as the seed layer of thin film solar cells, a porous structure for a...

Crystallization of Amorphous Germanium Investigated by X-ray Absorption Spectroscopy